| PART |
Description |
Maker |
| GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| UN4123 UNR4123 UN4121/4122/4123/4124/412X/412Y |
UN4121/4122/4123/4124/412X/412Y - PNP Transistor with built-in Resistor
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters
From old datasheet system
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MA4EX1201-1300 MA4EX1201-1300T |
GaAs MMIC Double Balanced 11-15 GHz Mixer GaAs MMIC双平衡混频器11-15千兆
|
Lattice Semiconductor, Corp.
GSI Technology, Inc.
|
| CF750 Q62702-F1391 |
From old datasheet system
GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路（偏置双门砷化镓场效应管）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH402-3 Q62702-P96 SFH401 Q62702-P784 Q62702-P786 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
From old datasheet system
|
Siemens Semiconductor G...
http://
SIEMENS[Siemens Semiconductor Group]
红外LED
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
